20ETF10FP Просмотр технического описания (PDF) - Vishay Semiconductors
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20ETF10FP Datasheet PDF : 8 Pages
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20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Vishay Semiconductors
Fast Soft Recovery
Rectifier Diode, 20 A
1000
100
TJ = 25 °C
10
TJ = 150 °C
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.7
TJ = 25 °C
0.6
IFM = 30 A
0.5
IFM = 20 A
IFM = 10 A
0.4
IFM = 5 A
IFM = 1 A
0.3
0.2
0.1
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
1.2
TJ = 150 °C
0.9
IFM = 30 A
IFM = 20 A
0.6
IFM = 10 A
IFM = 5 A
IFM = 1 A
0.3
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
6
TJ = 25 °C
5
4
IFM = 30 A
IFM = 20 A
3
IFM = 10 A
2
IFM = 5 A
1
IFM = 1 A
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
10
TJ = 150 °C
8
IFM = 30 A
IFM = 20 A
6
IFM = 10 A
4
IFM = 5 A
2
IFM = 1 A
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
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For technical questions within your region, please contact one of the following: Document Number: 93222
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 26-Jul-10
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