20ETF Просмотр технического описания (PDF) - Vishay Semiconductors
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20ETF Datasheet PDF : 8 Pages
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20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
150
RthJC (DC) = 0.9 K/W
140
130
Ø
Conduction angle
120
110
100
0
30°
60°
90°
120°
180°
5
10
15
20
25
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
35
180°
30
120°
90°
25
60°
30°
20
RMS limit
15
10
Ø
Conduction period
5
TJ = 150 °C
0
0
5
10
15
20
25
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
RthJC (DC) = 0.9 K/W
140
Ø
130
Conduction period
120
110
100
0
60°
90°
30°
120°
180°
DC
5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
350
At any rated load condition and with
300
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
250
at 50 Hz 0.0100 s
200
150
100
50
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
180°
30
120°
90°
25
60°
30°
20
RMS limit
15
10
Ø
Conduction angle
5
TJ = 150 °C
0
0
5
10
15
20
25
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
400
Maximum non-repetitive surge current
350
versus pulse train duration.
Initial TJ = 150 °C
300
No voltage reapplied
Rated VRRM reapplied
250
200
150
100
50
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93222 For technical questions within your region, please contact one of the following:
Revision: 26-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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