1SV228 Просмотр технического описания (PDF) - Toshiba

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1SV228

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

Toshiba 

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV228

1SV228

Electronic Tuning Applications of FM Receivers

• Low rs: rs = 0.3 Ω (typ.)

• Useful for small size set

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Reverse voltage

Junction temperature

Storage temperature

VR

15

V

Tj

125

°C

Tstg

-55 to 125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

1-3G1F

Weight: 0.013 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min Typ. Max Unit

Reverse voltage

Reverse current

Capacitance (Note 2)

Capacitance (Note 2)

Capacitance ratio

Series resistance

VR

IR

C3V

C8V

C3V / C8V

rs

IR = 10 μA

VR = 15 V

VR = 3 V, f = 1 MHz

VR = 8 V, f = 1 MHz

―

VR = 3 V, f = 100 MHz

15

―

―

V

―

―

10

nA

(Note 1) 28.5 30.5 32.5

pF

(Note 1) 11.7 12.7 13.7

(Note 1) 2.1

―

2.6

―

(Note 1) ―

0.3 0.5

Ω

Note 1: Characteristics between anode 1 and anode 2

Note 2: Available in matched group for capacitance to 3%.

For devices with the ordering number 1SV228(TPH2,F) and 1SV228(TPH6,F).

C (max) − C (min)

C (min)

<= 0.03 (VR = 2 to 8 V).

Marking

Start of commercial production

1995-12

1

2016-12-19

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