TQ9147B Просмотр технического описания (PDF) - TriQuint Semiconductor
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TQ9147B Datasheet PDF : 10 Pages
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TQ9147B
Data Sheet
Electrical Characteristics
Parameter 1
Frequency
Supply Voltage (VDD)
Temperature
POUT
Efficiency
Rx band Noise 2
Small Signal Gain
Power Gain
Input Return Loss
Harmonics
2nd Harmonic
3rd Harmonic
4th Harmonic
Spurious (Stability)
RF Off Isolation
Ruggedness
Conditions
tuned for cellular band
measured at case
VDD = 4.8 V
VDD = 4.3 V
PIN = -30 to +7 dBm
PIN = -10 dBm
POUT = 32 dBm (typ)
PIN = -30 to +7 dBm
PIN = -30 to +7 dBm
VDD at burnout
Min
824
2.7
-40
31.5
55
Typ/Nom
4.8
25
32
30
60
-90
32
25
10
-70
20
6.5
Max
849
6.0
+110
-30
-35
-35
Units
MHz
V
oC
dBm
dBm
%
dBm
dB
dB
dB
dBc
dBc
dBc
dBc/30 kHz
dBc
V
Note 1: Test Conditions: VDD = 4.8 V, PIN = +7 dBm, Freq. = 824 & 849 MHz, VGG = 3.5 V, TC = 25°C.
Note 2: Noise power is measured in 30 kHz band width at the transmit frequency plus 45 MHz
Note 3: Load is set to 50 ohms, output power measured at nominal test conditions. Load VSWR is set to 10:1 and the angle is varied 360 degrees over 5 seconds.
Load set to 50 ohms, output power remeasured and compared with the first measurement to check for no degradation from the first measurement.
Absolute Maximum Ratings
Parameter
DC Power Supply 1
DC Gate Voltage
RF Input Power
Storage Temperature
Operating Temperature (case)
Note 1: Into a 10:1 mismatch.
Value
8.0
-5.0
20
-55 to 150
-40 to 110
Units
V
V
dBm
°C
°C
2
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