1SS250 Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание

производитель

1SS250

TOSHIBA Diode Silicon Epitaxial Planar Type

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Reverse current

Total capacitance

Reverse recovery time

Symbol

VF (1)

VF (2)

IR (1)

IR (2)

CT

trr

Test Condition

IF = 10mA

IF = 100mA

VR = 50V

VR = 200V

VR = 0V, f = 1MHz

IF = 10mA (Fig.1)

Marking

1SS250

Min Typ. Max Unit

― 0.72 1.00

V

― 0.90 1.20

―

―

0.1

μA

―

―

1.0

―

1.5 3.0

pF

―

10

60

ns

Fig.1 Reverse recovery time (trr) test circuit

2

2017-10-31

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