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Q67000-A8302 Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание
производитель
Q67000-A8302
Infineon
Infineon Technologies Infineon
Q67000-A8302 Datasheet PDF : 29 Pages
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TCA 3727
Table 5
Characteristics (cont’d)
VS = 40 V; VL = 5 V; -25 °C Tj 125 °C
Parameter
Symbol
Limit Values
Unit Test Condition
Min. Typ. Max.
Internal Z-Diode
Z-voltage
Power Outputs
VLZ
6.5 7.4 8.2 V IL = 50 mA
Diode Transistor Sink Pair (D13, T13; D14, T14; D23, T23; D24, T24)
Saturation voltage
Vsatl
0.3 0.6 V IQ = -0.5 A
Saturation voltage
Vsatl
0.5 1
V IQ = -0.75 A
Reverse current
IRl
300 µA VQ = 40 V
Forward voltage
VFl
0.9 1.3 V IQ = 0.5 A
Forward voltage
VFl
1
1.4 V IQ = 0.75 A
Diode Transistor Source Pair (D11, T11; D12, T12; D21, T21; D22, T22)
Saturation voltage
VsatuC
0.9 1.2 V IQ = 0.5 A;
charge
Saturation voltage
VsatuD
0.3 0.7 V IQ = 0.5 A;
discharge
Saturation voltage
VsatuC
1.1 1.4 V IQ = 0.75 A;
charge
Saturation voltage
VsatuD
0.5 1
V IQ = 0.75 A;
discharge
Reverse current
IRu
Forward voltage
VFu
Forward voltage
VFu
Diode leakage current
ISL
300 µA VQ = 0 V
1
1.3 V IQ = -0.5 A
1.1 1.4 V IQ = -0.75 A
1
2
mA IF = -0.75 A
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and
the given supply voltage.
Data Sheet
10
Rev. 2.0, 2004-10-01

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