1PS79SB31 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

1PS79SB31

Schottky barrier diode

NXP Semiconductors. 

NXP Semiconductors

Schottky barrier diode

Product data sheet

1PS79SB31

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

continuous reverse current

Cd

diode capacitance

Note

1. Pulse test: tp = 300 μs; δ = 0.02.

CONDITIONS

see Fig.2;

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

IF = 100 mA

IF = 200 mA

VR = 10 V; note 1; see Fig.3

VR = 1 V; f = 1 MHz; see Fig.4

MIN.

130

190

255

355

420

2.5

20

MAX.

190

250

300

410

500

30

25

UNIT

mV

mV

mV

mV

mV

μA

pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to

ambient

CONDITIONS

note 1

Note

1. Refer to SC-79 (SOD523) standard mounting conditions.

VALUE

450

UNIT

K/W

2002 Jan 11

3

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