1PS79SB31 Просмотр технического описания (PDF) - Philips Electronics

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Компоненты Описание

производитель

1PS79SB31

Schottky barrier diode

Philips Electronics 

Philips Semiconductors

Schottky barrier diode

Product specification

1PS79SB31

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

continuous reverse current

Cd

diode capacitance

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

CONDITIONS

see Fig.2;

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

IF = 100 mA

IF = 200 mA

VR = 10 V; note 1; see Fig.3

VR = 1 V; f = 1 MHz; see Fig.4

MIN.

130

190

255

355

420

2.5

20

MAX.

UNIT

190

mV

250

mV

300

mV

410

mV

500

mV

30

µA

25

pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to

ambient

CONDITIONS

note 1

Note

1. Refer to SC-79 (SOD523) standard mounting conditions.

VALUE

450

UNIT

K/W

2002 Jan 11

3

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