CXA3541N Просмотр технического описания (PDF) - Sony Semiconductor
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CXA3541N Datasheet PDF : 17 Pages
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CXA3541N
No.
Item
Symbol
Measurement conditions Min.
Write Safety Characteristics
U1 Write head open threshold Rop
Detect open head
U2
Head voltage when short to
GND
VG
Detect short to GND
U3 WD frequency too low
fWDL
0.5
U4 Write safety detect time
Tws
T1: 2 transitions on WDX/WDY
U5 Low VCC threshold
VWthL
Fault detected
3.7
U6 Low VCC threshold
VWthH
Fault removed
3.9
U7 Low VCC threshold hysteresis Vhys
Switching Characteristics Iw = 29.5mA, IB = 5.9mA
S1 Write to Read
TWR
Signal on WDX/WDY
90% RD signal or 10% IW
S2 Read to Write
TRW
90% IW
S3 Idle to Read
S4 Sleep to Read
TIR
TSR1
90% RD signal
90% RD signal, 90% IB∗1
IB = "011"
Bank Write Characteristics Iw = 29.5mA, IB = 5.9mA
S5 Read to Bank write
TRB
90% IW
S6 Bank write to Read
TBR
10% IW
S7
Idle to Bank write
Idle to Write
TIW
90% IW
Serial Port Timing
B1 Setup time
TSU (sden) SDEN to first SCLK
30
B2 Hold time
Th (sden) Last SCLK to deassert SDEN 15
B4 SCLK frequency
f (sclk)
B5 SCLK pulse width
Tw (sclk)
10
B6 SCLK – SDATA setup time TSU (d)
10
B7 SCLK – SDATA hold time Th (d)
10
B8 SDEN low time
TSL
100
∗1 TSR is proportional to IB and external CAP value.
Typ.
1.2
3.9
4.1
200
300
50
600
Max. Unit
1.4 V
0.1 V
1.8
300
+ T1
4.1
4.3
MHz
ns
V
V
mV
500 ns
70 ns
1.0 µs
2000 µs
100 ns
100 ns
300 µs
ns
ns
30 MHz
ns
ns
ns
ns
–8–
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