1N70Z Просмотр технического описания (PDF) - Unisonic Technologies
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1N70Z Datasheet PDF : 7 Pages
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1N70Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
700
V
±20
V
1.2
A
1.2
A
4.8
A
50
mJ
4.0
mJ
4.5
V/ns
Power Dissipation
PD
3
W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
℃
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJc
RATINGS
79
29
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
UNIT
℃/W
℃/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
700
V
Drain-Source Leakage Current
IDSS
VDS = 700V, VGS = 0V
Forward
Gate-Source Leakage Current
Reverse
IGSS
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA
10 μA
+5 μA
-5 μA
0.4
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
2.0
4.0 V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
RDS(ON) VGS = 10V, ID = 0.6A
9.3 13.5 Ω
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1MHz
120 150 pF
20 25 pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
CRSS
3.0 4.0 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tD(ON)
tR
tD(OFF)
tF
VDD=350V, ID=1.2A, RG=50Ω
(Note 2,3)
5 20 ns
25 60 ns
7 25 ns
25 60 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=560V, VGS=10V,
ID=1.2A (Note 2,3)
5.0 6.0 nC
1.0
nC
2.6
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-723.B
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