1N6818 Просмотр технического описания (PDF) - Microsemi Corporation
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1N6818 Datasheet PDF : 2 Pages
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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
1N6818
(MSASC75H45F)
PRELIMINA1NR681Y8R Features
• Tungsten/Platinum schottky barrier for very low VF
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
(MSASC75H45FR)
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
45 Volts
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6818) and reverse
75 Amps
polarity (strap is cathode: 1N6818R)
LOW VOLTAGE
Maximum Ratings @ 25°C (unless otherwise specified)
DROP SCHOTTKY
DIODE
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤125°C
derating, forward current, Tc≥ 125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6818
1N6818R
VRRM
VRWM
VR
IF(ave)
dIF/dT
IFSM
IRRM
Tj
Tstg
θJC
45
45
45
75
4
500
2
-55 to +150
-55 to +150
0.50
0.65
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Mechanical Outline
ThinKey™ 4
Datasheet# MSC1029A
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