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1N65A

0.5A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

1N65A

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

V

Gate-Source Voltage

Continuous Drain Current

VGSS

±30

V

ID

0.5

A

Pulsed Drain Current (Note 2)

IDM

Avalanche Energy

Single Pulse(Note 3)

EAS

2

A

50

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

SOT-223

8.9

W

Power Dissipation (TC=25°C) TO-251/TO-252

27.6

W

TO-92

SOT-223

PD

1.42

W

0.07

mW/°C

Derate above 25°C

TO-251/TO-252

0.22

mW/°C

TO-92

0.011

mW/°C

Junction Temperature

TJ

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C

4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C

 THERMAL DATA

PARAMETER

SOT-223

Junction to Ambient

TO-251/TO-252

TO-92

SOT-223

Junction to Case

TO-251/TO-252

TO-92

SYMBOL

θJA

θJC

RATINGS

150

110

180

14

4.53

88

UNIT

°C/W

°C/W

°C/W

°С/W

°С/W

°С/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-584.D

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