1N65L Просмотр технического описания (PDF) - Unisonic Technologies
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1N65L Datasheet PDF : 7 Pages
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1N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
650
V
±30
V
1.2
A
1.2
A
4.8
A
50
mJ
4.0
mJ
4.5
V/ns
SOT-223
8
W
TO-251/TO-251L
TO-252
28
W
Power Dissipation
TO-220
TO-220F
PD
40
W
21
W
TO-92 (TA=25°C)
TO-126
1
W
12.5
W
DFN5060-8
14
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SOT-223
TO-220/TO-220F
TO-251/TO-251L
Junction to Ambient TO-252
TO-92
TO-126
DFN5060-8
SOT-223
TO-220
TO-220F
Junction to Case
TO-251/TO-251L
TO-252
TO-92
TO-126
DFN5060-8
SYMBOL
θJA
θJC
RATINGS
150
62.5
4.53
140
132
75
14
3.13
5.95
4.53
80
10
8.9
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-579.F
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