1N65L-TF3-K Просмотр технического описания (PDF) - Unisonic Technologies
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1N65L-TF3-K Datasheet PDF : 7 Pages
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UNISONIC TECHNOLOGIES CO., LTD
1N65
1.2A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N65 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used in
the high speed switching applications of power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) <12.5Ω @ VGS=10V, ID=0.6A
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
1
SOT-223
1
TO-92
1
1
TO-220
TO-220F
1
TO-251
1
TO-251L
1
1
TO-252
1
TO-126
DFN5060-8
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