Figure 2. HMMC-5021/22/26 Bonding Pad Locations.
Notes:
All dimensions in microns.
Rectangular Pad Dim: 75 x 75 µm.
Octagonal Pad Dim: 90 µm dia.
All other dimensions ±5 µm
(unless otherwise noted).
Chip thickness: 127 ± 15 µm.
1.5 mil dia.Gold Wire
Bond to ≥15 nF
DC Feedthru
≥4 nH Inductor
(0.7 mil Gold Wire Bond
with length ≥150 mils)
≥68 pF Capacitor
Input and Output Thin Film
Circuit with ≥8 pF
DC Blocking Capacitor
Trace Offset
168 µm
(6.6 mils)
Gold Plated Shim
2.0 mil
nom. gap
VDD
OUT
IN
VG1
2.0 mil
nom. gap
0.7 mil dia. Gold Bond Wire
(Length NOT important)
Trace Offset
168 µm
(6.6 mils)
Bonding Island
1.5 mil dia.Gold Wire
Bond to ≥15 nF DC Feedthru
Note:
Total offset between RF input
and RF output pad is 335 µm
(13.2 mils).
Figure 3. HMMC-5021/22/26 Assembly Diagram.
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