TGA8334 Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGA8334 Datasheet PDF : 7 Pages
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Product Data Sheet
TGA8334-SCC
RF CHARACTERISTICS
Gp
P 1dB
∆Gp
S WR(in)
S WR(o ut)
IP 3
P ARAMETER
Sma ll-s ignal pow e r gain
Output pow er a t 1–dB gain
compre s s ion
Gain fla tne s s
Input s ta nding w ave ratio
Output s tanding w ave ra tio
Output third–orde r inte rce pt point
TES T C ONDITIONS
f = 2 to 20 GHz
f = 2 to 14 GHz
f =14 to 18 GHz
f = 2 to 20 GHz
f = 2 GHz
f = 9 GHz
f =18 GHz
f = 2 GHz
f = 9 GHz
f =18 GHz
f = 2 GHz
f = 9 GHz
f =18 GHz
TYP
8
26
25
±1
1.6:1
1.7:1
1.1:1
2.0:1
1.4:1
1.5:1
38
41
38
UNIT
dB
dBm
dB
-
-
-
-
-
-
dBm
DC CHARACTERISTICS
V D = 8 V, VCNTR = 1 V, I D = 50% IDSS, T A = 25oC,
P ARAMETER
TES T C ONDITIONS
M IN M AX UNIT
IDSS Total zero–gate –voltage drain curre nt a t s a tura tion V DS = 0.5 V to 3.5 V, VGS = 0 V 630 1170 mA
TA = 25OC
VDS for IDSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC Autoprobe.
THERMAL
INFORMATION
P ARAMETER
TES T C ONDITION
NOM UNIT
RθJ C The rma l re s is ta nc e (c ha nne l to ba c ks ide ) VD = 8 V, ID = 50% IDS S , VCTRL = 1 V 18.7 °C/W
EQUIVALENT
SCHEMATIC
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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