1N5822UB1(2009) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

1N5822UB1
(Rev.:2009)

Aerospace 40 V power Schottky rectifier

STMicroelectronics 

Characteristics

1

Characteristics

1N5822U

Table 2. Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM Repetitive peak reverse voltage

40

V

IF(RMS) Forward rms current

10

A

IF(AV) Average forward rectified current Tc = 135 °C, δ = 0.5

3

A

IFSM Forward surge current

tp = 10 ms sinusoidal

80

A

Tstg Storage temperature range

-65 to + 150

°C

Tj

Maximum operating junction temperature (1)

150

°C

Tsol Maximum soldering temperature (2)

245

°C

1.

d----P-----t--o----t

dTj

<

------------1-------------

Rth(j – a)

condition to avoid thermal runaway for a diode on its own heatsink

2. Maximum duration 5 s. The same package must not be resoldered until 3 minutes have elapsed.

Table 3. Thermal resistance

Symbol

Parameter

Rth (j-c) Junction to case

Value

7

Unit

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Tj = -55 °C

-

IR (1)

Reverse current

Tj = 25 °C

VR = 40 V

-

Tj = 100 °C

-

Tj = 25 °C IF = 1A

-

Tj = -55 °C

-

VF (2) Forward voltage Tj = 25 °C

IF = 3 A

-

Tj = 100 °C

-

Tj = 25 °C IF = 9.4 A

-

1. Pulse test : tp = 5 ms, δ < 2%

2. Pulse test : tp = 680 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.32 x IF(AV) + 0.050 IF2(RMS )

Typ. Max. Unit

-

40

µA

-

80

-

12

mA

-

0.4

-

0.56

-

0.485 V

-

0.455

-

0.70

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Cj Diode capacitance VR = 5 V, F = 1 MHz

Min. Typ. Max. Unit

-

-

240

pF

2/7

Doc ID 16007 Rev 1

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