1N5817W Просмотр технического описания (PDF) - Semtech Electronics LTD.
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1N5817W Datasheet PDF : 3 Pages
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1N5817W
Characteristics at Tamb = 25℃
Symbol
Min.
Typ.
Max.
Unit
at IF = 0.1A
VFM
-
Forward Voltage (Note 1) at IF = 1.0A
at IF = 3.0A
Reverse Breakdown
at IR=1.0mA
Voltage
VFM
-
VFM
-
V(BR)R
20
Reverse Leakage
at VR=20V
-
Current (Note 1)
at VR=20V,TA=100℃
-
at VR=2V
at VR=2V, TA=100℃
IRM
-
-
at VR=3V
-
at VR=3V, TA=100℃
-
Typical Junction Capacitance
at VR = 2V, f = 1MHz
CJ
-
-
0.32
V
-
0.45
V
-
0.75
V
-
-
V
-
1
mA
-
10
mA
10
50
μA
1
2
mA
15
75
μA
1.5
3
mA
110
-
pF
Notes:
1. Pulse Test: Pulse width≦200μs, Duty Cycle≦2%.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 24/11/2004
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