AT29LV020-12JC Просмотр технического описания (PDF) - Atmel Corporation
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AT29LV020-12JC Datasheet PDF : 15 Pages
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Features
• Single Voltage, Range 3V to 3.6V Supply
• 3-volt Only Read and Write Operation
• Software Protected Programming
• Fast Read Access Time - 100 ns
• Low Power Dissipation
– 15 mA Active Current
– 40 µA CMOS Standby Current
• Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 1024 Sectors (256 Bytes/Sector)
– Internal Address and Data Latches for 256 Bytes
• Two 8K Bytes Boot Blocks with Lockout
• Fast Sector Program Cycle Time - 20 ms
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29LV020 is a 3-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 2 megabits of memory is organized as 262,144 bytes by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 100 ns with power dissipation of just 54 mW over the commer-
cial temperature range. When the device is deselected, the CMOS standby current is
less than 40 µA. The device endurance is such that any sector can typically be written
to in excess of 10,000 times.
2-megabit
(256K x 8)
3-volt Only
Flash Memory
AT29LV020
Pin Configurations
Pin Name
Function
A0 - A17
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
TSOP Top View
Type 1
A11 1
A9 2
A8 3
A13 4
A14 5
A17 6
WE 7
VCC 8
NC 9
A16 10
A15 11
A12 12
A7 13
A6 14
A5 15
A4 16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Rev. 0565C–FLASH–05/02
1
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