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SST31LF021-300-4E-WH

2 Mbit Flash + 1 Mbit SRAM ComboMemory

Silicon Storage Technology 

2 Mbit Flash + 1 Mbit SRAM ComboMemory

SST31LF021 / SST31LF021E

EOL Data Sheet

the SST31LF021/021E devices significantly improve per-

formance and reliability, while lowering power consumption,

when compared with multiple chip solutions. The

SST31LF021/021E inherently use less energy during

Erase and Program than alternative flash technologies.

When programming a flash device, the total energy con-

sumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter Erase time, the total energy consumed dur-

ing any Erase or Program operation is less than alternative

flash technologies. The monolithic ComboMemory elimi-

nates redundant functions when using two separate mem-

ories of similar architecture; therefore, reducing the total

power consumption.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

The SST31LF021/021E devices also improve flexibility by

using a single package and a common set of signals to

perform functions previously requiring two separate

devices. To meet high density, surface mount requirements,

the SST31LF021/021E devices are offered in 32-lead

TSOP packages. See Figure 1 for the pinouts.

Device Operation

The ComboMemory uses BES# and BEF# to control oper-

ation of either the SRAM or the flash memory bank. Bus

contention is eliminated as the monolithic device will not

recognize both bank enables as being simultaneously

active. If both bank enables are asserted (i.e., BEF# and

BES# are both low), the BEF# will dominate while the

BES# is ignored and the appropriate operation will be exe-

cuted in the flash memory bank. SST does not recommend

that both bank enables be simultaneously asserted. All

other address, data, and control lines are shared; which

minimizes power consumption and area. The device goes

into standby when both bank enables are raised to VIHC.

SRAM Operation

With BES# low and BEF# high, the SST31LF021/021E

operate as a 128K x8 or 32K x8 CMOS SRAM, with fully

static operation requiring no external clocks or timing

strobes. The SRAM is mapped into the first 128 KByte

address space of the device. Read and Write cycle times

are equal.

SRAM Read

The SRAM Read operation of the SST31LF021/021E are

controlled by OE# and BES#, both have to be low with

WE# high, for the system to obtain data from the outputs.

BES# is used for SRAM bank selection. When BES# and

BEF# are high, both memory banks are deselected. OE# is

the output control and is used to gate data from the output

pins. The data bus is in high impedance state when OE# is

high. See Figure 2 for the Read cycle timing diagram.

SRAM Write

The SRAM Write operation of the SST31LF021/021E are

controlled by WE# and BES#, both have to be low for the

system to write to the SRAM. BES# is used for SRAM bank

selection. During the Byte-Write operation, the addresses

and data are referenced to the rising edge of either BES#

or WE#, whichever occurs first. The Write time is measured

from the last falling edge to the first rising edge of BES# and

WE#. See Figure 3 for the Write cycle timing diagram.

Flash Operation

With BEF# active, the SST31LF021/021E operate as a

256K x8 flash memory. The flash memory bank is read

using the common address lines, data lines, WE# and

OE#. Erase and Program operations are initiated with the

JEDEC standard SDP command sequences. Address and

data are latched during the SDP commands and internally

timed Erase and Program operations.

Flash Read

The Read operation of the SST31LF021/021E devices are

controlled by BEF# and OE#, both have to be low, with

WE# high, for the system to obtain data from the outputs.

BEF# is used for flash memory bank selection. When

BEF# and BES# are high, both banks are deselected and

only standby power is consumed. OE# is the output control

and is used to gate data from the output pins. The data bus

is in high impedance state when OE# is high. See Figure 4

for the Read cycle timing diagram.

Flash Erase/Program Operation

SDP commands are used to initiate the flash memory bank

Program and Erase operations of the SST31LF021/021E.

SDP commands are loaded to the flash memory bank

using standard microprocessor write sequences. A com-

mand is loaded by asserting WE# low while keeping BEF#

low and OE# high. The address is latched on the falling

edge of WE# or BEF#, whichever occurs last. The data is

latched on the rising edge of WE# or BEF#, whichever

occurs first.

©2007 Silicon Storage Technology, Inc.

2

S71137-06-EOL

05/07

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