DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

1N4246GP Просмотр технического описания (PDF) - General Semiconductor

Номер в каталоге
Компоненты Описание
производитель
1N4246GP
GE
General Semiconductor GE
1N4246GP Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES 1N4245GP THRU 1N4249GP
FIG. 1 - FORWARD CURRENT DERATING CURVE
1.0
60 HZ
RESISTIVE OR
INDUCTIVE LOAD
0.8
0.6
0.4
0.2
0.375" (9.5mm) LEAD LENGTH
0.1
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
0.1
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
25
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
20
15
10
5.0
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
1
TJ=100°C
0.1
0.01
0
TJ=25°C
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
20
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
10
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
1
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]