18N60L Просмотр технического описания (PDF) - Unisonic Technologies
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18N60L Datasheet PDF : 4 Pages
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18N60
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
24
20
16
12
8
4
0
0
200
400 600 800 1000
Source to Drain Voltage,VSD (mV)
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
00
1
2
3
4
Gate Threshold Voltage,VTH (V)
Power MOSFET
Drain-Source On-State
Resistance Characteristics
12
VGS=10V,
10
ID=9.0A
8
6
4
2
0
0
1
2
3
4
Drain to Source Voltage, VDS (V)
Drain Current vs. Drain-Source
Breakdown Voltage
400
350
300
250
200
150
100
50
00
200 400
600 800 1000
Drain-Source Breakdown Voltage,BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R502-221.H
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