18N60G Просмотр технического описания (PDF) - Unisonic Technologies
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18N60G Datasheet PDF : 4 Pages
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18N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Peak Diode Recovery dv/dt
Single Pulsed
Repetitive
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
600
±30
18
45
18
1000 (Note 2)
30
10
V
V
A
A
A
mJ
V/ns
Power Dissipation
TO-247
TO-3P
PD
360
W
395
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=6.18mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°С
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-247
TO-3P
TO-247
TO-3P
SYMBOL
θJA
θjC
RATINGS
40
30
0.35
0.32
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-221.H
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