150KSR20A Просмотр технического описания (PDF) - Vishay Semiconductors

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150KSR20A

Standard Recovery Diodes (Stud Version), 150 A

Vishay Semiconductors 

45L(R), 150K(R), 150KS(R) Series

Vishay High Power Products Standard Recovery Diodes

(Stud Version), 150 A

250

DC

180°

200

120°

90°

60°

150

30°

100 RMSLimit

50

0.6 K/ W

0.8 K/ W

1 K/ W

Conduc tion Period

45L..., 150... Series

TJ = 200°C

1.5 K/ W

2 K/ W

3 K/W

0

0

50 100 150 200 22550 50 75 100 125 150 175 200

Average Forward Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - Forward Power Loss Characteristics

3500

3000

2500

At Any Ra ted Load Condition And With

Rated V RRM Applied Following Surge.

Initial TJ= 200°C

@60 Hz 0.0083 s

@50 Hz 0.0100 s

2000

1500

1000

45L..., 150... Series

500

1

10

100

Numb er Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

4000

3500

3000

2500

Maximum Non Repetitive Surge Current

Versus Pulse Train Dura tion.

Initial TJ= 200°C

No Voltage Reapplied

Rated VRRMReapplied

2000

1500

1000

45L..., 150... Series

500

0.01

0.1

1

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

10000

1000

TJ= 25°C

100

TJ = 200°C

45L...,150... Series

10

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

InstantaneousForward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

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For technical questions, contact: ind-modules@vishay.com

Document Number: 93489

Revision: 21-May-08

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