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TS4990EIJT Просмотр технического описания (PDF) - STMicroelectronics

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TS4990EIJT Datasheet PDF : 32 Pages
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TS4990
Electrical characteristics
Table 6.
Symbol
Electrical characteristics when VCC = 2.6V, GND = 0V, Tamb = 25°C (unless
otherwise specified)
Parameter
Min. Typ. Max. Unit
ICC
Supply current
No input signal, no load
3.1
6
mA
ISTBY
Standby current (1)
No input signal, VSTBY = GND, RL = 8Ω
10 1000 nA
Voo
Output offset voltage
No input signal, RL = 8Ω
1
10
mV
Pout
Output power
THD = 1% max, F = 1kHz, RL = 8Ω
220 300
mW
THD + N
Total harmonic distortion + noise
Pout = 200mWrms, AV = 2, 20Hz F 20kHz, RL = 8Ω
0.1
%
Power supply rejection ratio(2)
PSRR RL = 8Ω, AV = 2, Vripple = 200mVpp, input grounded
dB
F = 217Hz
55 60
F = 1kHz
55 62
tWU Wake-up time (Cb = 1µF)
tSTBY Standby time (Cb = 1µF)
VSTBYH Standby voltage level high
VSTBYL Standby voltage level low
ΦM
Phase margin at unity gain
RL = 8Ω, CL = 500pF
GM
Gain margin
RL = 8Ω, CL = 500pF
GBP
Gain bandwidth product
RL = 8Ω
Resistor output to GND (VSTBY VSTBYL)
ROUT-GND Vout1
Vout2
125 150
ms
10
µs
1.2
V
0.4
V
65
Degrees
15
dB
1.5
MHz
6
kΩ
46
1. Standby mode is active when VSTBY is tied to GND.
2. All PSRR data limits are guaranteed by production sampling tests.
Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon
VCC.
7/32

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