TS4990EIJT Просмотр технического описания (PDF) - STMicroelectronics

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TS4990EIJT

1.2 W audio power amplifier with active low standby mode

STMicroelectronics 

TS4990

3

Electrical characteristics

Electrical characteristics

Table 4.

Electrical characteristics when VCC = +5 V, GND = 0 V, Tamb = 25°C

(unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Unit

ICC

Supply current

No input signal, no load

3.7

6

mA

ISTBY

Standby current (1)

No input signal, VSTBY = GND, RL = 8Ω

10 1000 nA

Voo

Output offset voltage

No input signal, RL = 8Ω

1

10

mV

Pout

Output power

THD = 1% max, F = 1kHz, RL = 8Ω

0.9 1.2

W

THD + N

Total harmonic distortion + noise

Pout = 1Wrms, AV = 2, 20Hz ≤ F ≤ 20kHz, RL = 8Ω

0.2

%

Power supply rejection ratio(2)

PSRR RL = 8Ω, AV = 2, Vripple = 200mVpp, input grounded

dB

F = 217Hz

55 62

F = 1kHz

55 64

tWU Wake-up time (Cb = 1µF)

90 130

ms

tSTBY Standby time (Cb = 1µF)

10

µs

VSTBYH Standby voltage level high

1.3

V

VSTBYL Standby voltage level low

0.4

V

ΦM

Phase margin at unity gain

RL = 8Ω, CL = 500pF

65

Degrees

GM

Gain margin

RL = 8Ω, CL = 500pF

15

dB

GBP

Gain bandwidth product

RL = 8Ω

1.5

MHz

Resistor output to GND (VSTBY ≤VSTBYL)

ROUT-GND Vout1

Vout2

3

kΩ

43

1. Standby mode is active when VSTBY is tied to GND.

2. All PSRR data limits are guaranteed by production sampling tests.

Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon

VCC.

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