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RLP1N06CLE

1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET

Intersil 

Data Sheet

RLP1N06CLE

July 1999 File Number 2839.4

1A, 55V, 0.750 Ohm,Voltage Clamping,

Current Limited, N-Channel Power

MOSFET

The RLP1N06CLE is an intelligent monolithic power circuit

which incorporates a lateral bipolar transistor, resistors,

zener diodes, and a PowerMOS transistor. The current

limiting of this device allows it to be used safely in circuits

where it is anticipated that a shorted load condition may be

encountered. The drain to source voltage clamping offers

precision control of the circuit voltage when switching

inductive loads. Logic level gates allow this device to be fully

biased on with only 5V from gate to source. Input protection

is provided for ESD up to 2kV.

Formerly developmental type TA09880.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RLP1N06CLE

TO-220AB

L1N06CLE

NOTE: When ordering, use the entire part number.

Features

• 1A, 55V

• rDS(ON) = 0.750Ω

• ILIMIT at 150oC = 1.1A to 1.5A Maximum

• Built-in Voltage Clamp

• Built-in Current Limiting

• ESD Protected, 2kV Minimum

• Controlled Switching Limits EMI and RFI

• 175oC Rated Junction Temperature

• Logic Level Gate

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

Packaging

S

JEDEC TO-220AB

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

6-428

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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