0790_XP162A01B5PR Просмотр технического описания (PDF) - TOREX SEMICONDUCTOR

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Компоненты Описание

производитель

0790_XP162A01B5PR

Power MOS FET

TOREX SEMICONDUCTOR 

XP162A01B5PR

■Typical Performance Characteristics

DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE

-6

-5V

-4.5V

-5

-4V

-4 -3.5V

Pulse Test, Ta=25:

-3V

-2.5V

-3

-2

-2V

-1

Vgs＝-1.5V

0

0

-1

-2

-3

Drain-Source Voltage:Vds (V)

DRAIN CURRENT vs. GATE-SOURCE VOLTAGE

Pulse Test, Vds=-10V

-6

Topr＝25℃

-5

-4

-55℃ 125℃

-3

-2

-1

0

0

-1

-2

-3

-4

-5

Gate-Source Voltage:Vgs (V)

DRAIN-SOURCE ON-STATE RESISTANCE

vs. GATE-SOURCE VOLTAGE

Pulse Test, Ta=25:

0.5

0.4

0.3

Id＝-1A -2A

0.2

0.1

0

0

-2

-4

-6

-8

-10

Gate-Source Voltage:Vgs (V)

11

DRAIN-SOURCE ON-STATE RESISTANCE

vs. AMBIENT TEMPERATURE

Pulse Test

1

0.8

0.6

0.4

0.2

0

-60

Vgs＝-2.5V

Id＝-2A

-1A

-4.5V

-1A,-2A

-30 0 30 60 90 120 150

Ambient Temp.:Topr (:)

DRAIN-SOURCE ON-STATE RESISTANCE

vs. DRAIN CURRENT

Pulse Test, Ta=25:

10

1

Vgs＝-2.5V

-4.5V

0.1

0

-1

-2

-3

-4

-5

-6

Drain Current:Id (A)

GATE-SOURCE CUT-OFF VOLTAGE VARIANCE

vs. AMBIENT TEMPERATURE

Vds=-10V, Id=-1mA

0.6

0.4

0.2

0.0

-0.2

-0.4

-0.6

-60

-30 0

30 60 90 120 150

Ambient Temp.:Topr (:)

872

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