0790_XP162A01B5PR Просмотр технического описания (PDF) - TOREX SEMICONDUCTOR
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0790_XP162A01B5PR Datasheet PDF : 4 Pages
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XP162A01B5PR
■Electrical Characteristics
DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
Yfs
Vf
CONDITIONS
Vds=-20V, Vgs=0V
Vgs=±12V, Vds=0V
Id=-1mA, Vds=-10V
Id=-1A, Vgs=-4.5V
Id=-1A, Vgs=-2.5V
Id=-1A, Vds=-10V
If=-2A, Vgs=0V
Ta=25:
MIN
TYP
MAX
UNITS
-10
µA
±10
µA
-0.5
V
0.19
0.25
Ω
0.3
0.4
Ω
2.5
S
-0.85
-1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=-10V, Vgs=0V
f=1MHz
Ta=25:
MIN
TYP
MAX
UNITS
320
pF
180
pF
65
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=-5V, Id=-1A
Vdd=-10V
Ta=25:
MIN
TYP
MAX
UNITS
10
ns
15
ns
40
ns
50
ns
Thermal Characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
11
Thermal Resistance
(channel-ambience)
Rth (ch-a) Implement on a ceramic PCB
62.5
:/W
871
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