0790_XP162A01B5PR Просмотр технического описания (PDF) - TOREX SEMICONDUCTOR
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производитель
0790_XP162A01B5PR Datasheet PDF : 4 Pages
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Power MOS FET
NP-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.25Ω (max)
NUltra High-Speed Switching
NSOT-89 Package
■Applications
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
■General Description
The XP162A01B5PR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-89 package makes high density mounting possible.
■Features
Low on-state resistance : Rds(on)=0.25Ω(Vgs=-4.5V)
: Rds(on)=0.4Ω(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage : -2.5V
High density mounting : SOT-89
■Pin Configuration
1
2
3
Ｇ
Ｄ
Ｓ
SOT-89
（TOP VIEW）
11 ■Equivalent Circuit
1
2
3
P-Channel MOS FET
(1 device built-in)
870
■Pin Assignment
PIN
NUMBER
1
2
3
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
■Absolute Maximum Ratings
Ta=25:
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
-20
V
±12
V
-2
A
-6
A
-2
A
Continuous Channel
Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
Storage Temperature
Tstg
Note: When implemented on a ceramic PCB
150
:
-55~150 :
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