FDPF51N25 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDPF51N25 Datasheet PDF : 12 Pages
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Package Marking and Ordering Information
Part Number
FDP51N25
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU
Top Mark
FDP51N25
FDPF51N25
FDPF51N25
FDPF51N25
Package
TO-220
TO-220F
TO-220F
(Y-formed)
TO-220F
(LG-formed)
Packing Method
Tube
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 μA, TJ = 25 ° C
ID = 250 μA, Referenced to 25°C
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 25.5 A
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 25.5 A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 125 V, ID = 51 A,
VGS = 10 V, RG = 25 Ω
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 200 V, ID = 51 A,
VGS = 10 V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 51 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 51 A,
dIF/dt =100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.68 mH, IAS = 51 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25° C.
3. ISD ≤ 51 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25° C.
4. Essentially independent of operating temperature typical characteristics.
Min.
250
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3.0
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Typ. Max. Unit
--
--
V
0.25
-- V/°C
--
1
μA
--
10
μA
--
100 nA
--
-100 nA
--
5.0
V
0.048 0.060 Ω
43
--
S
2620 3410 pF
530 690 pF
63
90
pF
62
135
ns
465
940
ns
98
205
ns
130
270
ns
55
70
nC
16
--
nC
27
--
nC
--
51
A
--
204
A
--
1.4
V
178
--
ns
4.0
--
μC
©2008 Fairchild Semiconductor Corporation
2
FDP51N25 / FDPF51N25 Rev. 1.8
www.fairchildsemi.com
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