16N50UT Просмотр технического описания (PDF) - Fairchild Semiconductor
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16N50UT Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
102 Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101 Bottom: 5.5V
100
10-1
10-1
* Notes :
1. 250s Pulse Test
2. T =25oC
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.6
0.5
V =10V
GS
0.4
V =20V
GS
0.3
* Note: T = 25oC
J
0.2
0
5
10
15
20
25
30
35
40
I , DrainCurrent [A]
D
Figure 5. Capacitance Characteristics
4000
3000
C
oss
C =C +C (C =shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
2000
1000
C
iss
C
rss
* Note :
1. V =0V
GS
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
Figure 2. Transfer Characteristics
101
150oC
25oC
* Notes :
1. VDS = 40V
2. 250s Pulse Test
100
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
101
150oC
25oC
* Notes :
1. V =0V
GS
2. 250s Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V , Source-Drainvoltage [V]
SD
Figure 6. Gate Charge Characteristics
12
10
V =100V
DS
V =250V
DS
8
V =400V
DS
6
4
2
* Note: I =15A
D
0
0
10
20
30
40
Q T t l G t Ch [ C]
3
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