16N50UT Просмотр технического описания (PDF) - Fairchild Semiconductor
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16N50UT Datasheet PDF : 9 Pages
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Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP16N50U
Device
FDP16N50U
Package
TO-220
Reel Size
-
Tape Width
-
FDPF16N50UT
FDPF16N50UT
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
Test Conditions
Min.
ID = 250A, VGS = 0V, TJ = 25oC
500
ID = 250A, Referenced to 25oC
-
VDS = 500V, VGS = 0V
-
VDS = 400V, TC = 125oC
-
VGS = ±30V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 7.5A
VDS = 40V, ID = 7.5A
3.0
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 15A
VGS = 10V
-
-
-
-
-
(Note 4, 5)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 15A
RG = 25
-
-
-
(Note 4, 5)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 15A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 15A
dIF/dt = 100A/s
-
-
-
-
(Note 4)
-
Typ.
-
0.5
-
-
-
-
0.37
23
1495
235
20
32
8.5
14
40
150
65
80
-
-
-
65
0.1
Max. Unit
-
-
25
250
±100
V
V/oC
A
nA
5.0
V
0.48
-
S
1945 pF
310 pF
30
pF
45
nC
-
nC
-
nC
90
ns
310
ns
140
ns
170
ns
15
A
60
A
1.6
V
-
ns
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.5mH, IAS = 15A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 16A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
©2009 Fairchild Semiconductor Corporation
2
FDP16N50U / FDPF16N50UT Rev. C0
www.fairchildsemi.com
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