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2N930 Просмотр технического описания (PDF) - Microsemi Corporation

Номер в каталоге
Компоненты Описание
производитель
2N930
Microsemi
Microsemi Corporation Microsemi
2N930 Datasheet PDF : 2 Pages
1 2
2N930, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 500 µAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 0.5 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 0.5 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz
Small-Signal Short-Circuit Output Admittance
VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz f 1.0 MHz
Noise Figure
VCE = 5 Vdc; IC = 10 µAdc; Rg =10k
Test 1: f = 100 Hz
Test 2: f = 1.0 kHz
Test 3: f = 10 kHz
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hfe
hib
hob
Cobo
NF
Min. Max. Unit
100
300
150
600
Vdc
1.0
0.6
1.0
Vdc
1.5
6.0
150
600
25
32
1.0
µΩ
8.0
pF
5
dB
3
3
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2

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