2N930 Просмотр технического описания (PDF) - Microsemi Corporation
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2N930 Datasheet PDF : 2 Pages
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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/253
Devices
2N930
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.0 mW/0C above TA = +250C
2) Derate linearly 4.0 mW/0C above TC = +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
Symbol
RθJC
Value
45
60
6.0
30
300
600
-55 to +200
Units
Vdc
Vdc
Vdc
mAdc
mW
0C
Max.
97
Unit
0C/W
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
V(BR)CEO
VCB = 60 Vdc
ICBO
VCB = 45 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 45 Vdc
ICES
Collector-Base Cutoff Current
VCE = 5.0 Vdc
ICEO
Min. Max.
Unit
45
Vdc
µAdc
10
ηAdc
10
µAdc
10
5.0
ηAdc
2.0
ηAdc
2.0
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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