2SC4427 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SC4427

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC4427

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=1mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE==

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=2A;IB=0.4A

VBEsat

Base-emitter saturation voltage

IC=2A;IB=0.4A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.3A ; VCE=5V

hFE-2

DC current gain

IC=1.5A ; VCE=5V

fT

Transition frequency

IC=0.3A ; VCE=10V

COB

Output capacitance

VCB=10V;f=1MHz

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=3A;RL=133C

IB1=0.6A; IB2=-1.2A

VCC=400V

hFE-1 classifications

K

L

M

10-20

15-30

20-40

MIN TYP. MAX UNIT

1100

V

800

V

7

V

2.0

V

1.5

V

10

µA

10

µA

10

40

8

15

MHz

90

pF

0.5

µs

3.0

µs

0.3

µs

2

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