RJP3047 Просмотр технического описания (PDF) - Renesas Electronics

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производитель

RJP3047

RJP3049 / TO-3P / IGBT

Renesas Electronics 

New-Generation Power MOS FET:

Low Loss MOS FET " JET " (10th Gen.)

Contact:

PW

Optimized Process Design for Voltage Regulator to Achieve High Efficiency and Smaller Solution

Application

*JET: Renesas internal development name

Voltage Regulator: CPU Core,GPU, Chipset and Memory (N/B PC, Server, VGA, POL)

Synchronous Rectification for Brick Converter (Telecom, Network, Server)

Features and Advantage

Compare with Previous

30% Cut RDS(on) Ultra Low RDS(on)

VDSS = 30 V

Reduced the Thermal Temperature

LFPAK

WPAK

SOP-8

1.6 mΩ typ.

1.5 mΩ typ.

2.6 mΩ typ. Capable High Current High Performance

Low On State

Power Loss

High Efficiency

Saving Energy

Low Driver

Power Loss

Low Switching

Power Loss

27% Cut Qg

Low Qg

Achieve High Freq. & High Slew Rate

Capable Smaller & Thin Size

30% Cut Qgd

Low Qgd

High Performance (FOM: Figure of Merit)

100

20% improve than Speed

Renesas

VDSS = 30 V

50

JET (10th Gen.)

Renesas

Speed (9th Gen.)

Renesas

8th Gen.

20

10

1

2 RDS(on) 5

10

(VGS = 4.5 V)typ. (mΩ)

Low Conduction Loss

High Efficiency

94

92

90

88

86

8 tJShEGpTeeen(d.10(9ththGGeenn..))

84

82

80

78

76

0

RJK0305DPBx1

RJK0328DPBx1

RJK0305DPBx1

RJK0301DPBx1

HAT2168Hx1

HAT2165Hx1

5

10 15 20 25 30

Iout [A]

Lineup

RDS(on)

Qg Qgd

(VGS = 4.5 V)(mΩ) (nC) (nC)

LFPAK RJK0328DPB 2.1 typ. 2.9 max. 8.8 42

Note

5 devices

WPAK RJK0346DPA 1.9 typ. 2.7 max. 10.5 49 11 devices

SOP-8 RJK0348DSP 3.2 typ. 4.5 max. 7.0 34 9 devices

<Test Conditions>

Driver

IC

Hi x1

L

DUT

Lo x1

Vin = 12 V, Vout = 1.2 V

VDR = 5 V, fsw = 500 kHz

Ta = 25°C, L = 0.45 µH

No Air Flow

Vout

2

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