5N120BND Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
5N120BND
Fairchild Semiconductor
5N120BND Datasheet PDF : 8 Pages
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HGTG5N120BND, HGTP5N120BND
Typical Performance Curves Unless Otherwise Specified (Continued)
40
RG = 25Ω, L = 5mH, VCE = 960V
35
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
TJ = 25oC, TJ = 150oC, VGE = 15V
15
2
3
4
5
6
7
8
9
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
250
RG = 25Ω, L = 5mH, VCE = 960V
225
VGE = 12V, VGE = 15V, TJ = 150oC
200
175
150
125
VGE = 12V, VGE = 15V, TJ = 25oC
100
2
3
4
5
6
7
8
9
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
40
RG = 25Ω, L = 5mH, VCE = 960V
35
30 TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
10
TJ = 25oC, TJ = 150oC, VGE = 15V
0
2
3
4
5
6
7
8
9
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
250
RG = 25Ω, L = 5mH, VCE = 960V
200
TJ = 150oC, VGE = 12V OR 15V
150
100
TJ = 25oC, VGE = 12V OR 15V
50
2
3
4
5
6
7
8
9
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
80
DUTY CYCLE <0.5%, VCE = 20V
70 PULSE DURATION = 250µs
60
50
40
TC = 25oC
30
20
TC = 150oC
10
TC = -55oC
0
7
8
9
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
16
IG(REF) = 1mA, RL = 120Ω, TC = 25oC
14
VCE = 1200V
12
10
VCE = 800V
8
VCE = 400V
6
4
2
0
0
10
20
30
40
50
60
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
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