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5N120BND

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor 

HGTG5N120BND, HGTP5N120BND

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

Current Turn-On Delay Time

Current Rise Time

Current Turn-Off Delay Time

Current Fall Time

Turn-On Energy

Turn-Off Energy (Note 3)

Diode Forward Voltage

Diode Reverse Recovery Time

Thermal Resistance Junction To Case

SYMBOL

td(ON)I

trI

td(OFF)I

tfI

EON

EOFF

VEC

trr

RθJC

TEST CONDITIONS

IGBT and Diode at TJ = 150oC,

ICE = 5A,

VCE = 960V,

VGE = 15V,

RG = 25Ω,

L = 5mH,

Test Circuit (Figure 20)

IEC = 10A

IEC = 7A, dlEC/dt = 200A/µs

IEC = 1A, dlEC/dt = 200A/µs

IGBT

Diode

MIN TYP MAX UNITS

-

20

25

ns

-

15

20

ns

-

182

280

ns

-

175

200

ns

-

1000 1300

µJ

-

560

800

µJ

-

2.70

3.50

V

-

50

65

ns

-

30

40

ns

-

-

0.75

oC/W

-

-

1.75

oC/W

NOTE:

3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for

Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

25

VGE = 15V

20

15

10

5

0 25

50

75

100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

35

TJ = 150oC, RG = 25Ω, VGE = 15V, L = 5mH

30

25

20

15

10

5

0

0

200 400 600 800 1000 1200 1400

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

©2003 Fairchild Semiconductor Corporation

HGTG5N120BND, HGTP5N120BND, Rev. B1

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