FGPF50N33BT Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGPF50N33BT Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
Device
FGPF50N33BT
FGPF50N33BTTU
Package
TO-220F
Eco Status
RoHS
Packaging
Type
Tube
Qty per Tube
50ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
BVCES
TJ
ICES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
IGES
G-E Leakage Current
VGE = 0V, IC = 250A, Tc=25oC
VGE = 0V, IC = 250A, Tc=125oC
VGE = 0V, IC = 250A
VCE = VCES, VGE = 0V, Tc=25oC
VCE = VCES, VGE = 0V, Tc=125oC
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
IC = 250A, VCE = VGE
IC = 20A, VGE = 15V,
IC = 30A, VGE = 15V,
ITCC==5205Ao,CVGE = 15V,
ITCC==5102A5,oVCGE = 15V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 200V, IC = 20A,
RG = 5,
Resistive
VGE =
Load,
15V,
TC =
25oC
VCC = 200V, IC = 20A,
RG = 5,
Resistive
VGE =
Load,
15V,
TC =
125oC
VCE = 200V, IC = 20A,
VGE = 15V
Min.
330
340
-
-
-
-
2.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
-
-
-
-
0.2
-
-
20
-
200
-
±200
3.3
4.3
1.2
1.5
1.3
-
1.6
-
1.7
-
980
-
70
-
40
-
9
-
33
-
32
-
202
-
9
-
37
-
33
-
332
-
35
-
6
-
14
-
Unit
V
V
V/oC
A
A
nA
V
V
V
V
V
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
©2008 Fairchild Semiconductor Corporation
2
FGPF50N33BT Rev. C0
www.fairchildsemi.com
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