50N33 Просмотр технического описания (PDF) - Fairchild Semiconductor
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50N33 Datasheet PDF : 8 Pages
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FGPF50N33BT
330 V PDP Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.6 V @ IC = 50 A
• High Input Impedance
• RoHS Compliant
Applications
• PDP TV
April 2013
General Description
Using novel trench IGBT technology, Fairchild®'s new series of
trench IGBTs offer the optimum performance for PDP TV appli-
cations where low conduction and switching losses are essen-
tial.
GC E
TO-220F
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICpulse (1)*
ICpulse (2)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Pulsed Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
2: Half Sine Wave, D < 0.01, pluse width < 10usec
*Ic_pluse limited by max Tj
©2008 Fairchild Semiconductor Corporation
1
FGPF50N33BT Rev. C0
Ratings
330
30
50
120
160
43
17.2
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
W
W
oC
oC
oC
Typ.
-
-
Max.
2.9
62.5
Unit
oC/W
oC/W
www.fairchildsemi.com
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