DH321 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

DH321

Green Mode Fairchild Power Switch (FPS™)

Fairchild Semiconductor 

FSDH321, FSDL321

Electrical Characteristics (Sense FET Part)

(Ta = 25°C unless otherwise specified)

Parameter

Sense FET SECTION

Drain-Source Breakdown Voltage

Startup Voltage (Vstr) Breakdown

Zero Gate Voltage Drain Current

Static Drain-Source on Resistance

(Note)

Forward Trans conductance (Note)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn on Delay Time

Rise Time

Turn Off Delay Time

Fall Time

Total Gate Charge

(Gate-Source + Gate-Drain)

Gate-Source Charge

Gate-Drain (Miller) Charge

Symbol

Condition

Min. Typ. Max. Unit

BVDSS

BVSTR

IDSS

VGS=0V, ID=50µA

VCC=0V, ID=1mA

VDS=Max. Rating,

VGS=0V

VDS=0.8Max. Rating,

VGS=0V, TC=125°C

650 720

-

V

650 720

-

V

-

-

25

µA

-

-

200 µA

RDS(ON) VGS=10V, ID=0.5A

-

14 19

Ω

gfs

VDS=50V, ID=0.5A

1.0 1.3

-

S

CISS

COSS

CRSS

VGS=0V, VDS=25V,

f=1MHz

-

162

-

-

18

-

pF

-

3.8

-

td(on) VDD=0.5B VDSS,

-

9.5

-

tr

ID=1.0A

-

19

-

(MOSFET switching time

td(off) is essentially

-

33

-

ns

tf

independent of

operating temperature)

-

42

-

Qg

VGS=10V, ID=1.0A,

VDS=0.5B VDSS

-

7.0

-

Qgs

(MOSFET switching time -

3.1

-

is essentially

nC

Qgd

independent of operating -

0.4

-

temperature)

Note:

1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%

2. S = -1--

R

5

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