DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NCP303LSN16T1G Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
NCP303LSN16T1G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCP303LSN16T1G Datasheet PDF : 26 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NCP302, NCP303
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Power Supply Voltage (Pin 2)
Delay Capacitor Pin Voltage (Pin 5)
Output Voltage (Pin 1)
Complementary, NCP302
NChannel Open Drain, NCP303
Vin
12
V
VCD
0.3 to Vin + 0.3
V
VOUT
V
0.3 to Vin + 0.3
0.3 to 12
Output Current (Pin 1) (Note 2)
Thermal Resistance JunctiontoAir
Maximum Junction Temperature
All NCP Options
All NCV Options
IOUT
RqJA
TJ
70
250
+125
+150
mA
°C/W
°C
Operating Ambient Temperature Range
All Voltage Options: 0.9 V to 1.1 V
All Voltage Options: 1.2 V to 4.9 V
Storage Temperature Range
Moisture Sensitivity Level
TA
TA
Tstg
MSL
40 to +85
°C
40 to +125
°C
55 to +150
°C
1
Latchup Performance (Note 3)
Positive
Negative
ILATCHUP
mA
200
200
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MILSTD883, Method 3015.
Machine Model Method 200 V.
2. The maximum package power dissipation limit must not be exceeded.
PD
+
TJ(max) *
RqJA
TA
3. Maximum ratings per JEDEC standard JESD78.
http://onsemi.com
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]