2SD1138
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
PC
PC * 1
Tj
Tstg
Rating
Unit
200
V
150
V
6
V
2
A
5
A
1.8
W
30
W
150
°C
–45 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO 150 —
voltage
Emitter to base breakdown
V(BR)EBO
6
—
voltage
Collector cutoff current
I CBO
—
—
DC current transfer ratio
hFE1*1
60
—
hFE2
60
—
Collector to emitter saturation VCE (sat) —
—
voltage
Base to emitter voltage
VBE
—
—
Collector output capacitance Cob
—
20
Note: 1. The 2SD1138 is grouped by hFE1 as follows.
2. Pulse test.
Max Unit
—
V
—
V
1
µA
320
—
3.0 V
1.0 V
—
pF
Test conditions
IC = 50 mA, RBE = ∞
IE = 5 mA, IC = 0
VCB = 120 V, IE = 0
VCE = 4 V, IC = 50 mA
VCE = 10 V, IC = 500 mA*2
IC = 500 mA, IB = 50 mA*2
VCB = 4 V, IC = 50 mA
VCB = 100 V, IE = 0, f = 1 MHz
B
60 to 120
C
D
100 to 200 160 to 320