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Компоненты Описание
BUZ91AF Просмотр технического описания (PDF) - Siemens AG
Номер в каталоге
Компоненты Описание
производитель
BUZ91AF
SIPMOS Power Transistor / 600V / 8A / TO-220 AB
Siemens AG
BUZ91AF Datasheet PDF : 9 Pages
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8
9
BUZ 91 A
Avalanche energy
E
AS
=
ƒ
(
T
j
)
parameter:
I
D
= 8 A,
V
DD
= 50 V
R
GS
= 25
Ω
,
L
= 16.3 mH
600
mJ
500
E
AS
450
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(
T
j
)
Typ. gate charge
V
GS
=
ƒ
(
Q
Gate
)
parameter:
I
D puls
= 12 A
16
V
V
GS
12
10
0,2
V
DS max
0,8
V
DS max
8
6
4
2
0
0
20 40 60 80 100
130
Q
Gate
710
V
680
V
(BR)DSS
660
640
620
600
580
560
540
-60
-20
20
60
100 °C 160
T
j
Semiconductor Group
8
07/96
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