2SB1181P(RevC) Просмотр технического описания (PDF) - ROHM Semiconductor
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Компоненты Описание
производитель
2SB1181P Datasheet PDF : 4 Pages
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Transistors
2SB1260 / 2SB1181 / 2SB1241
Ta=25°C
−2
−1
−0.5
−0.2
−0.1
−0.05
IC/IB=20
10
−0.02
−0.01
−1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
1000
500
Ta=25°C
VCE= −5V
200
100
50
20
10
5
2
1
12
5 10 20 50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.5 Gain bandwidth product
vs. emitter current
1000
500
200
100
50
Ta=25°C
f=1MHz
IE=0A
20
10
5
2
1
−0.1 -0.2
−0.5 -1 −2
−5 −10 −20 −50 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
1000
500
200
100
Ta=25°C
f=1MHz
IC=0A
−10
IC Max.(Pulse)
−1 IC Max.
Ta=25°C
∗Single
nonrepetitive
pulse
P
−0.1
DC
W =100ms
50
−0.01
20
10
−0.1 −0.2 −0.5 −1 −2
−5 −10
EMITTER TO BASE VOLTAGE : VEB (V)
−0.001
−0.1
−1
−10
−100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig. 7 Emitter input capacitance
vs. emitter-base voltage
Fig.8 Safe operating area
(2SB1260)
10
5
2
1
500m
IC Max.(Pulse)
DC
∗Ta=25°C
Single
nonrepetitive
pulse
200m
100m
50m
20m
10m
∗ 5m Printed circuit board:
2m 1.7 mm thick with collector
1m copper plating at least 1 cm2.
0.1 0.2 0.5 1 2 5 10 20 50 100200 5001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
(2SB1241)
−5
∗Ta=25°C
Single
−2
nonrepetitive
pulse
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area
(2SB1181)
Rev.C
3/3
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