7MBR35SB-120 Просмотр технического описания (PDF) - Fuji Electric
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производитель
7MBR35SB-120 Datasheet PDF : 7 Pages
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IGBT Modules
Characteristics (Representative)
7MBR35SB120
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25 oC (typ.)
80
VGE= 20V 15V 12V
60
10V
40
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
80
VGE= 20V
15V 12V
60
10V
40
20
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
80
Tj= 25 oC
Tj= 125 oC
60
40
20
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
10000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Cies
1000
Coes
Cres
100
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
20
0
0
8V
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
10
8
6
4
2
0
5
1000
Ic= 70A
Ic= 35A
Ic= 17.5A
10
15
20
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25 oC
25
25
800
20
600
15
400
10
200
5
0
0
0
100
200
300
400
Gate charge : Qg [ nC ]
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