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RJP30H2DPK-M0-T2 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге
Компоненты Описание
производитель
RJP30H2DPK-M0-T2
Renesas
Renesas Electronics Renesas
RJP30H2DPK-M0-T2 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RJP30H2DPK-M0
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1 0.05
0.02
0.03 0.01
0.01
10 μ
100 μ
θjc(t) = γs (t) θjc
θjc = 2.08°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
Pulse Width PW (s)
Preliminary
Switching Time Test Circuit
Ic Monitor
RL
Vin Monitor
Rg
D.U.T.
VCC
Vin = 15 V
Waveform
90%
Vin
10%
90%
90%
Ic
td(on)
10%
tr
td(off)
ton
toff
10%
tf
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Page 5 of 6

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