IRF9640PBF Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRF9640PBF

Power MOSFET

Vishay Semiconductors 

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRF9640, SiHF9640

Vishay Siliconix

VDS

VGS

RG

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

-

+VDD

Fig. 10a - Switching Time Test Circuit

VDS

10 %

td(on) tr

td(off) tf

90 %

VGS

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

L

RG

D.U.T

- 10 V

IAS

tp

0.01 Ω

-

+ VDS

Fig. 12a - Unclamped Inductive Test Circuit

Document Number: 91086

S-81272-Rev. A, 16-Jun-08

IAS

VDS

VDD

tp

V(BR)DSS

Fig. 12b - Unclamped Inductive Waveforms

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