IR2151(Old_V) Просмотр технического описания (PDF) - International Rectifier

Номер в каталоге

Компоненты Описание

производитель

IR2151
(Rev.:Old_V)

SELF-OSCILLATING HALF-BRIDGE DRIVER

International Rectifier 

Previous Datasheet

Device Information

Process & Design Rule

Transistor Count

Die Size

Die Outline

Index

Next Data Sheet

IR2151

HVDCMOS 4.0 µm

231

68 X 101 X 26 (mil)

Thickness of Gate Oxide

Connections

First

Layer

Second

Layer

Contact Hole Dimension

Insulation Layer

Passivation

Method of Saw

Method of Die Bond

Wire Bond

Leadframe

Package

Remarks:

Material

Width

Spacing

Thickness

Material

Width

Spacing

Thickness

Material

Thickness

Material

Thickness

Method

Material

Material

Die Area

Lead Plating

Types

Materials

800Å

Poly Silicon

5 µm

6 µm

5000Å

Al - Si - Cu (Si: 1.0%, Cu ±0.5%)

6 µm

9 µm

20,000Å

5 µm X 5 µm

PSG (SiO2)

1.7 µm

PSG (SiO2)

1.7 µm

Full Cut

Ablebond 84 - 1

Thermo Sonic

Au (1.0 mil / 1.3 mil)

Cu

Ag

Pb : Sn (37 : 63)

8 Lead PDIP / SO-8

EME6300 / MP150 / MP190

To Order

CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL B-191

Share Link: